Solution-processable infrared photodetectors: Materials, device physics, and applications

APPLIED PHYSICS REVIEWS—FOCUSED REVIEW Lasers and photodetectors for mid-infrared 2–3 m applications

Solution-processed PbS quantum dot infrared photodetectors and photovoltaics.

In contrast to traditional semiconductors, conjugated polymers provide ease of processing, low cost, physical flexibility and large area coverage. These active optoelectronic materials produce and harvest light efficiently in the visible spectrum. The same functions are required in the infrared for telecommunications (1,300-1,600 nm), thermal imaging (1,500 nm and beyond), biological imaging (t...

Semiconductor Lasers: Device Physics and Applications

• Demonstration of an enhancement in the modulation bandwidth from 16 GHz to 28 GHz in an injection locked semiconductor laser with a coincident reduction in parasitic chirp. • Demonstration of room-temperature, continuous-wave operation of the first bipolar cascade laser. This laser demonstrated an internal efficiency of 150% and a measured external modulation efficiency of 99.3%. Continuous-w...

Quantum grid infrared photodetectors

In this letter we introduce a quantum well infrared photodetector ~QWIP! structure, which we refer to as the quantum grid infrared photodetector ~QGIP!. In an ideal structure, a grid pattern with very narrow linewidth is created in the QWIP active region to achieve lateral electron confinement, thereby improving its absorption as well as transport characteristics. In order to realize this detec...

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...